Optoelectronic Devices: Physics, Fabrication, and Application II : 24-25 October, 2005, Boston, Massachusetts, USAProceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature. |
Contents
DETECTORS | 601301-5 |
Highpower and highresponsivity photodiode for longhaul and shortreach fiber | 601306-1 |
Design fabrication and characterization of highperformance solarblind AlGaN | 601306-15 |
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Common terms and phrases
achieved active region air gap AlGaAs AlGaN angle Appl applications bandgap bandwidth beam bias voltage biochip carrier cavity chip chirp color DBR laser density detection detector diameter diode dispersion doped effect efficiency electrical electroabsorption modulator Electron emission emitting epitaxial etch evanescent field extinction ratio fabrication FDTD fiber field frequency GaAs injection integrated interdiffusion interface intermixing layer Lett material measured mirror mode modulator MOPA system nanoimprint lithography nanorod operation optical amplifiers optical cavity optical fiber optical power Optoelectronic Optoelectronic Devices output power peak performance phosphor photocurrent photodetectors photodiode photonic Phys pixel polarization polymer prism probe propagation pulse quantum range reflectance refractive index semiconductor shown in Figure silicon simulation SiO2 solar-blind spectral spectrum SPIE structure substrate surface tapered amplifier temperature thermal thickness transmission tunable tuning VCSEL VCSOAS vertical-cavity wafer wave waveguide wavelength width