Irradiation and Annealing of Silicon Planar TransistorsJ.W. Arrowsmith, 1966 - 17 pages |
Common terms and phrases
activation energy analysis Baldinger base current component Base current IB cent Chemie collector cutoff current const current transfer ratio diffusion component drift E-centre electrons endommagements étape explained exponential law extrapolated field effect forbidden energy gap Gallen gamma irradiated transistors gamma radiation holes IB increase linearly ICBI independent value induced defects integrated gamma flux integrated neutron flux inversion layer investigated IRRADIATION AND ANNEALING irradiation induced Isochronal annealing curves l'irradiation gamma l'irradiation par neutrons layer LENZLINGER lifetime Mathematik measurements minority carrier mobile carriers neutron and gamma neutron damage neutron irradiated transistors observed obtained p-type peuvent être photons/cm2 plotted recombination centres recombination level recombination-generation current recuite reverse current Riehen Shockley saturation current silicon crystal silicon planar transistors slow surface space charge surface effect tanh temperature temperature dependence thermally oxidized transistors npn unirradiated Universität Basel valence band wurde тро