8 pages matching electron beam lithography in this book
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acetone active layer airbridge spacer airbridges alignment marks alloy Appendix associated gain blow dry bonding pads contact lithography contact resistance contribution to source device layout doping level drain conductance drain current electron beam lithography electroplated epitaxy equivalent noise temperature evaporation exposed exposure dose fabrication ft/sq GaAs MESFET gate length gate level gate line gate metal gate resistance gate structure gate width ground plane H2O rinse KEY 1 LOC l5 sec level chip Level Exposure level wafer liftoff MARK JOY MARK JOY KEY measured mesa level MESFET metal resistance metal sheet resistance MOV FC JOY N2 blow dry noise figure noise temperature ohmic contact ohmic level overcut edges parameters photoresist PMMA PROCESS TITLE recess depth recessed gate RECT reduced registration resist layer S-parameters saturation Schottky source resistance spacer resist substrate transconductance UAFER uC/cm undercut wafer alignment