Nuclear magnetic resonance in lead telluride: a report of the Semiconductor Devices and Materials Group
Charles Robert Hewes, Massachusetts Institute of Technology. Semiconductor Devices and Materials Group
Massachusetts Institute of Technology, Center for Materials Science and Engineering, Dept. of Electrical Engineering, 1970 - Lead compounds - 197 pages
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PREPARATION AND CHARACTERIZATION OF
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agreement ampoules annealing axis band edge band model band ordering band-edge masses Brillouin zone carrier concentration dependence carrier density chemical shift component conduction band contact interaction contributions core polarization cos6+ curve determined discussed effective g factor effective mass electron energy band energy gap etch experimental data experimental value Fermi energy Fermi level Fermi surface frequency function g factors gauss Hamiltonian hyperfine constants hyperfine coupling Knight shift calculation Knight shift data kTTT Landau levels lead telluride linewidth longitudinal low temperature magnetic field magnitude masses and g measurements momentum matrix elements nuclear resonance nucleus obtained oscillator p-type p-type material parameters Pb resonance PbTe plotted powder reference field resonance data resonance field second band second valence band shown in Fig sin6 sin6+ source ingots spectrometer spin spin-orbit mixing T'TTT Table VII-3 tellurium temperature dependence transverse tube tvc1 valence and conduction valley vector wavefunctions zero carriers