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2An devices antisymmetric mode applied voltage approximately asymmetry bandwidth bias point channel waveguide coupling crossing angle crossing channel modulator cumulative mode conversion cutoff dielectric diffusion effect elec electric field electrode gap electrode length electrooptic equation error extinction fabrication frequency Guided Wave Optics higher order modes IEEE Journal increases index change input channel input mode integrated optical intensity versus voltage intersection region Journal of Quantum laser LiNbO3 linear dynamic range lowest order mode mode combination mode conversion mode interference modulation depth modulation index multimode number of modes number of possible optical power output channels parameters phase velocity propagation constant radiation modes refractive index shown in figure single mode sinusoidal slope substrate switching voltage symmetric third order intermodulation tion Total Internal Reflection transfer function transverse transverse modes V-mm variation versus voltage characteristic VL product Volts Applied waveguide depth waveguide index waveguide separation waveguide structure waveguide width wavelength widened-X Y-branch device