Simulation of Semiconductor Devices and Processes, Vol. 3: Proceedings of the Third International Conference on Simulation of Semiconductor Devices and Processes, Held at the University of Bologna, Bologna, Italy, on September 26th-28th, 1988Giorgio Baccarani, Massimo Rudan |
Contents
2D Simulation of Degenerate Hot Electron Transport in MODFETs | 19 |
Physical Modelling of GaAs Photodetectors D M Barry S P Platt C M | 31 |
Numerical Simulation of the Spreading Resistance of a Buried Ridge Stripe | 43 |
51 other sections not shown
Common terms and phrases
algorithm Baccarani band bias Bologna Italy boron boundary conditions calculated capacitance channel charge circuit coefficient computational concentration conductor continuity equations convergence current density device modelling device simulation DEVICES AND PROCESSES diffusion diffusion equation dimensional diode distribution domain dopant doping profile drain Edited by G effects efficiency electric field Electron Devices energy error experimental Fermi-Dirac statistics Figure finite element finite element method function GaAs gate geometry grain boundary grid heterojunction IEEE IEEE Trans impurity integration interface interstitials ion implantation iterations layer linear mesh method Monte Carlo MOSFET multigrid nodes obtained optimization oxide parameters particle performed Phys physical point defects Poisson Poisson's equation polysilicon potential problem process simulation PROCESSES Vol recombination refinement region relaxation Rudan scattering scheme SEMICONDUCTOR DEVICES shown in Fig silicon SIMULATION OF SEMICONDUCTOR solution solved structure substrate surface TCAD technique Tecnoprint temperature thermal thermionic emission transistor transport two-dimensional values velocity voltage