The blue laser diode: GaN based light emitters and lasers
The development of a blue semiconductor laser on the basis of GaN by Shuji Nakamura opens a new field for the applications of semiconductor lasers. The wavelengths can be tuned by controlling the composition. For the first time in one substrate material, lasers with various wavelenghts, ranging from red through yellow and green to blue, can be formed. This fact together with their high efficiency make GaN based lasers very useful for a wide spectrum of applications. Additionaly, the realization of a unique and successful concept of research and development is discussed.
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Physics of Gallium Nitride and Related Compounds
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active layer Akasaki AlGaN AlInGaP AlN buffer Amano Appl band gap band-edge emission barrier layers blue emission blue LEDs carrier concentration crystal quality curve DL emission doping electron energy excitons external quantum efficiency facet forward current function FWHM gallium nitride GaN buffer layers GaN films grown GaN growth green SQW LEDs grown with GaN Hall mobility hydrogen III-V nitride indium mole fraction InGaN active layer InGaN films InGaN MQW LDs IR-RTI Iwasa laser diodes LEEBI treatment Lett light emitting diodes luminous intensity Mg-doped GaN films MOCVD N2-ambient thermal annealing Nakamura obtained optical oscillation output power p-n junction p-type GaN films p-type GaN layer peak wavelength Phys PL measurements pulsed current quantum dot ridge-geometry room temperature sample sapphire substrate Sect semiconductor Senoh shown in Fig shows Shuji Nakamura Si-doped InGaN films SiH4 spectrum stimulated emission structure superlattices surface threshold current voltage Wavelength nm wurtzite xmol/min zincblende