Parametric and Tunnel Diodes |
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Page 52
... ohms . One of the most unusual characteristics of the tunneling resistance is its unique nonlinearity . The 1 - V characteristic curve is dominantly quadratic in the neighborhood of the peak current and dominantly cubic in the vicinity ...
... ohms . One of the most unusual characteristics of the tunneling resistance is its unique nonlinearity . The 1 - V characteristic curve is dominantly quadratic in the neighborhood of the peak current and dominantly cubic in the vicinity ...
Page 224
... ohms , rs = 5 ohms , ls = 0.5 x 10-2 henry , Ca = 10-12 farad , a ' = B / a = 200 ( volt ) B : R = 100 ohms , rs = 10 ohms , ls = 10- henry , Ca = = 10-12 farad , a ' 50 ( volt )C : R = 200 ohms , rs = 20 ohms , ls = 10- henry , Ca = 10 ...
... ohms , rs = 5 ohms , ls = 0.5 x 10-2 henry , Ca = 10-12 farad , a ' = B / a = 200 ( volt ) B : R = 100 ohms , rs = 10 ohms , ls = 10- henry , Ca = = 10-12 farad , a ' 50 ( volt )C : R = 200 ohms , rs = 20 ohms , ls = 10- henry , Ca = 10 ...
Page 231
... Ohm's law ( assuming the sum of reactive currents to be zero by tuning to resonance ) : 1. = ( G , + G ) V , - ~ .C . , ) ViA sin ( 17-9 ) no.C. 0 = ( GL + G2 ) V2 - V2B sin ( $ 2 – 01 ) ( 17–10 ) 2 For convenience of carrying out the ...
... Ohm's law ( assuming the sum of reactive currents to be zero by tuning to resonance ) : 1. = ( G , + G ) V , - ~ .C . , ) ViA sin ( 17-9 ) no.C. 0 = ( GL + G2 ) V2 - V2B sin ( $ 2 – 01 ) ( 17–10 ) 2 For convenience of carrying out the ...
Contents
CHAPTER 3Tunnel Diodes | 31 |
CHAPTER 4Diode Characteristics Design and Fabrication | 51 |
CHAPTER 5Parametric Devices | 71 |
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achieved applied assumed band bandwidth barrier becomes bias capacitance characteristic circuit components computed conductance considered constant converter curves depends determined device diffusion distributed doping effect efficiency electrical electrons element energy equal equation equivalent field Figure follows forward frequency gain given gives harmonic holes idling important increase input junction limited load loss low noise lower material maximum measured mhos microwave n-type noise factor nonlinear normalized obtained operating oscillator output p-n junction parametric amplifier parametric diode peak performance positive possible potential power gain pump pump frequency pump power ratio region relation represented resonant respectively semiconductor shown shown in Fig shows signal signal frequency similar solution stable temperature term theory tion tunnel diode unit values varies voltage wave zero