Novel Materials and Devices for Spintronics: Symposium Held April 14-17, 2009, San Francisco, California, U.S.A. |
Contents
Ferromagnetism and NearInfrared Luminescence | 45 |
Novel RoomTemperature Ferromagnetic Semiconductors | 51 |
Spin Polarization of Electrons Injected From Fe Into | 57 |
Copyright | |
7 other sections not shown
Common terms and phrases
2009 Materials Research anisotropy annealing anodization antiferromagnetic Appl applied magnetic field atoms behavior ceramic coefficient coercivity composite coupling Cr-rich Curie temperature delafossite device dielectric dielectric constant diffraction diffusion doped ZnO effect electron emu/cm³ energy epitaxial external magnetic field Fe3Si ferroelectric ferromagnetic film thickness films deposited films grown frequency GaMnAs growth H₁ hole spin increase interaction interface ions ISBN laser lattice layer Lett LSMO magnetic field magnetic moment magnetic properties magnetic semiconductors magnetoelectric magnetoresistance Materials Research Society mbar measurements Mn doped multiferroic nanowires observed obtained oxide partial oxygen pressure peak pellets phase Phys powder pulse pulsed laser deposition quantum dot Raman room temperature samples saturation magnetization semiconductor sensor shows Si-doping silane sintered spectra spin polarization Spintronics structure substrate temperature temperature dependent templates thin films TMR ratio voltage X-ray YbMnO3 ZnO films