Silicon Carbide: Recent Major Advances

Front Cover
Wolfgang J. Choyke, Hiroyuki Matsunami, Gerhard Pensl
Springer Science & Business Media, 2004 - Science - 899 pages
2 Reviews

Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume.

  

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Contents

Zero and TwoDimensional Native Defects
3
TwoDimensional Defects
14
Conclusion
22
FirstPrinciples Calculation of Defects Properties
29
Interstitial Migration
37
Vacancy Migration
41
Annealing of Vacancies and Interstitials
47
Conclusion
53
References
433
Band Structure and Effective Masses from Calculations
439
Band Structure and Effective Masses from ODCR Experiments
447
Conclusion
457
Paramagnetic and Photoluminescence Centers
463
DLTS of Intrinsic Defects
480
Conclusion
487
PhosphorusRelated Centers in
493

Methods of Calculation
62
What Have We Learned about Hydrogen in
78
Conclusion
84
Structural Models
90
Isolated SFs in 3C 4H 6H and 15?SiC
95
Thin Cubic Inclusions in 4 and 6SiC
109
References
117
Conclusions
133
Defect Formation and Reduction During Bulk SiC Growth
137
Growth Perpendicular to the cAxis Direction
153
Conclusion
160
The Increase of Conductivity in 4SiC
169
Conclusion
176
StepFree Basal Plane Mesa Formation
185
StepFree Surface Heteroepitaxy of 3CSiC
193
Conclusion and Future Directions
198
LowDefect 3CSiC Grown on UndulantSi 001 Substrates
207
Properties of 3CSiC Grown on UndulantSi
217
Properties of 3CSiC Homoepitaxial Layer
223
New Development in Hot Wall Vapor Phase Epitaxial
229
New Generation of Hot Wall CVD Reactors
238
Future Development
248
Basic Considerations on the IBS of SiC in Si
254
Influence of Dose and Implantation Temperature
260
SiC Thin Films at the Surface and Deep in the Si Substrate
266
Conclusion
273
Atomic Structure of SiC Surfaces
281
Surface Reconstruction on SiC000l
289
Other Surface Orientations
305
References
311
The Continuum of InterfaceInduced Gap States
317
IFIGSandElectronegativity Theory
329
Conclusions
338
SiCSiO2 Interface State Spectrum
344
Origin and Models of SiCSiO2 Interface States
352
Alternative Insulators on SiC
362
Properties of Nitrided Oxides on
373
Characteristics of MOS Devices
381
Hall Effect Studies of Electron Mobility and Trapping
387
Using Hall Data to Calculate DtE
399
References
409
Band Edge Absorption and Valence Band Splittings
417
Intrinsic Defects
421
Stacking Faults and NanoPolytypes
427
IR Transmission Measurements on Phosphorus Donors in 6SiC
499
Comparison of the Electrical Activation
507
References
513
Hall Scattering Factor
522
Conclusion
534
Selected Aspects of Radiotracer Deep Level Transient Spectroscopy
543
Summary and Conclusions
557
Vacancy Defects Detected by Positron Annihilation
563
Conclusion
581
Detection of Stacking Faults in 4H and 6SiC
590
Raman Scattering Related to Damages and Impurities
597
Conclusion
603
Applications of TEM Techniques to the Study
613
in Hexagonal SiC Created by Ion Implantation
614
References
627
Conclusions
646
Conclusion
666
SiC Bulk Micromachining
676
SiC Micromolding
683
Wafer Bonding Techniques
690
Surface Preparation Techniques for SiC Wafers
699
References
708
Device Processing
722
Conclusions
730
SiC Power Bipolar Transistors and Thyristors
737
Conclusion
763
High Voltage SiC Devices
769
High Voltage High Current SiC Module
779
Device Design and Technology
785
OnResistance
791
Various Considerations
799
Process Integration
805
NormallyOff AccumulationMode
813
Key Device Processing Technologies
821
Application of MOS Based Power Devices in HEV Inverters
832
Development of SiC Devices for Microwave
839
Key Issues on the Way to SiC RF Power Device Industry
844
Perspectives
864
Detection Mechanism of Field Effect Gas Sensors
870
Experimental
885
Applications
886
References
893
Copyright

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About the author (2004)

Matsunami, Kyoto University.