Silicon Carbide: Recent Major Advances
Wolfgang J. Choyke, Hiroyuki Matsunami, Gerhard Pensl
Springer, Oct 8, 2003 - Science - 899 pages
Since the 1997 publication of Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume.
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Advances in Silicon Carbide Processing and Applications
Stephen E. Saddow,Anant K. Agarwal
Limited preview - 2004
Zero and TwoDimensional Native Defects
FirstPrinciples Calculation of Defects Properties
Annealing of Vacancies and Interstitials
Band Structure and Effective Masses from Calculations
Band Structure and Effective Masses from ODCR Experiments
Paramagnetic and Photoluminescence Centers
DLTS of Intrinsic Defects
PhosphorusRelated Centers in
Methods of Calculation
What Have We Learned about Hydrogen in
Isolated SFs in 3C 4H 6H and 15?SiC
Thin Cubic Inclusions in 4 and 6SiC
Defect Formation and Reduction During Bulk SiC Growth
Growth Perpendicular to the cAxis Direction
The Increase of Conductivity in 4SiC
StepFree Basal Plane Mesa Formation
StepFree Surface Heteroepitaxy of 3CSiC
Conclusion and Future Directions
LowDefect 3CSiC Grown on UndulantSi 001 Substrates
Properties of 3CSiC Grown on UndulantSi
Properties of 3CSiC Homoepitaxial Layer
New Development in Hot Wall Vapor Phase Epitaxial
New Generation of Hot Wall CVD Reactors
Basic Considerations on the IBS of SiC in Si
Influence of Dose and Implantation Temperature
SiC Thin Films at the Surface and Deep in the Si Substrate
Atomic Structure of SiC Surfaces
Surface Reconstruction on SiC000l
Other Surface Orientations
The Continuum of InterfaceInduced Gap States
SiCSiO2 Interface State Spectrum
Origin and Models of SiCSiO2 Interface States
Alternative Insulators on SiC
Properties of Nitrided Oxides on
Characteristics of MOS Devices
Hall Effect Studies of Electron Mobility and Trapping
Using Hall Data to Calculate DtE
Band Edge Absorption and Valence Band Splittings
Stacking Faults and NanoPolytypes
IR Transmission Measurements on Phosphorus Donors in 6SiC
Comparison of the Electrical Activation
Hall Scattering Factor
Selected Aspects of Radiotracer Deep Level Transient Spectroscopy
Summary and Conclusions
Vacancy Defects Detected by Positron Annihilation
Detection of Stacking Faults in 4H and 6SiC
Raman Scattering Related to Damages and Impurities
Applications of TEM Techniques to the Study
in Hexagonal SiC Created by Ion Implantation
SiC Bulk Micromachining
Wafer Bonding Techniques
Surface Preparation Techniques for SiC Wafers
SiC Power Bipolar Transistors and Thyristors
High Voltage SiC Devices
High Voltage High Current SiC Module
Device Design and Technology
Key Device Processing Technologies
Application of MOS Based Power Devices in HEV Inverters
Development of SiC Devices for Microwave
Key Issues on the Way to SiC RF Power Device Industry
Detection Mechanism of Field Effect Gas Sensors
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Mechanical Engineering: Silicon Carbide: Recent Major Advances
Silicon Carbide: Recent Major Advances. wj Choyke, H. Matsunami, and G. Pensl, Editors. springerverlag, 233 Spring St., New York, NY 10013. 2003. 899 pages. ...
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For a recent review, see M. Laube et al., in Silicon Carbide: Recent Major Advances, edited by wj Choyke, H. Matsunami, and G. Pensl (Springer-Verlag, ...
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Measurements of Breakdown Field and Forward Current Stability in ...
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Intensity Ratio of the Doublet Signature of Excitons Bound to 3C ...
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Advances in Silicon Carbide. Processing and Applications. Stephen E. Saddow. Anant Agarwal. Editors. Artech House, Inc. Boston • London. www.artechhouse.com ...
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