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a lithographic performance review of an advanced
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absorbance absorption acid chemical amplification concentration contrast copolymers cresol crosslinking curves deep UV deprotection diffusion dissolution rate dry development dry etch effect electron etch rate excimer laser experimental exposed exposure dose exposure latitude Figure film thickness focus formulation g-line HMDS hydrogen bonding i-line increase inhibition KrF excimer laser lateral swelling layer lines and spaces linewidth lithography m-cresol mask materials measured micron molecular weight negative resist novolak resin obtained onium salt optical parameters particles phenolic photoactive compound photolysis photoresist photospeed plasma plasma etching Plasmask polymer positive photoresist post exposure bake Proc process latitude processing conditions puddle ratio reaction resist film resist thickness resolution samples sensitivity shown shows sidewall silicon incorporation silylating agent silylation slope softbake solubility solvent spectra SPIE spin coated stepper substrate surface t-BOC thermal TMAH top resist tosylate unexposed areas wafer wall angle wavelength