GaAs Low Noise X-band Monolithic Microwave Amplifiers |
Contents
INTRODUCTION | 6 |
FET DEVICE DESIGN AND LAYOUT | 6 |
FET FABRICATION MEASUREMENT AND RESULTS | 37 |
4 other sections not shown
Common terms and phrases
active layer AlGaAs amplifier design associated gain available gain band bias buffer layer capacitance chip coefficient decoupling determine device dielectric dielectric overlay capacitors distributed elements doping profile double recess structure drain current Dual stage amplifier electron electron beam lithography epilayer structure equivalent circuit etch fabricated FET layout Field Effect Transistors fixture GaAs GaAs MESFET gain and noise gain bandwidth Gain dB gain slope gate feeds gate resistance gatelength hi-lo active layer IEEE Trans impedance inductor input and output insertion loss load low noise low noise amplifiers lumped element matching networks measured S-parameters MESFET microstrip Microwave Microwave Theory MMIC mS/mm Negative image models noise figure ohmic optimization output conductance output network plane polyimide problem processing profile of wafer RCKH resistors S-parameters saturation current semi-insulating shown in Fig single recess structure single stage amplifier source resistance substrate thickness superlattice buffer synthesis transconductance Transistors transmission line tuner voltage VSWR