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0ata activation energy amorphous layer anion anion vacancies annealing temperature Appl Arrhenius atoms attributed bombardment Burgers vectors calculated cation centers clusters complexes composition correlation cToni damage decreased determined diffusion coefficient dipoles dislocation loops distribution dopant doping dose elastic electrical conductivity Electrochem electron enthalpy epitaxial equation etch F-center films formation Frenkel defect function Glasses grain boundary growth implanted impurity increased interaction interdiffusion interface interstitial ion implantation Ionic Conduction ions irradiation Irradiation Effects kinetics laser lattice Lett Mag.A measured mechanism method migration mobility N0W AVAILABLE Non-Cryst Nucl observed onsifuif0 onTsfuifO oxide oxygen oxygen partial pressure p-type parameters partial pressure phase Phil Phys Phys.C plane Point 0efects Poluprovodn profiles proton Radiat relaxation Rev.B room temperature samples screw dislocations self-diffusion single crystals Solid State Commun Solidi.A solution stacking fault Stat structure substrates suggested surface Table technique Tekh Temperature(C thermal tracer trapping void