Microcrystalline and nanocrystalline semiconductors--1998: symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.
Leigh T. Canham
Materials Research Society, 1999 - Reference - 569 pages
In addition to the now traditional themes of synthesis, structure and optoelectronic properties of nano- and microcrystalline semiconductors, this volume, the 5th in a popular series from MRS, reports on properties leading to new optical and biological applications. Individual nanocrystals, as well as nanocrystalline and microcrystalline semiconductors and thin films, represent an interesting class of materials whose properties differ from those of their single-crystal and amorphous counterparts. For example, the electrical, optical and chemical properties may be dominated by surface- and grain-boundary phenomena, and quantization can alter the electronic states. Such effects lead to unique properties that are sensitively dependent on the crystallite size and may be exploited in novel optoelectronic, sensor and biomedical devices. Materials scientists and engineers, condensed matter physicists, physical chemists, and electrical engineers come together here to share recent advances in the field.
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Enhancing the External Quantum Efficiency of Porous
Auger Effect Seen in the Porous Silicon Fast Luminescent Band
Formation Process of Si Nanoparticles Formed by Laser
63 other sections not shown
absorption amorphous annealing anodization Appl atoms band bandgap beam bonds bulk c-Si carrier CdSe CdTe Chem chemical colloidal crystal crystalline current density decrease devices diameter diffraction diffusion doped effect efficiency electrical electrochemical etching ethanol excitation exciton experimental fabricated Figure formation function GaAs Grignard reagents growth HgTe hydrogen hydrosilylation images implanted increase infrared interface laser Lett Lewis acid luminescence material measured microcrystalline microscopy multilayer n-type nanocrystalline nanocrystals nanoparticles nanostructures NC's nucleation observed obtained optical oxidation particles peak phase phonon photoluminescence Phys PL intensity PL spectra plasma plasmon plasmon energy polycrystalline pores porous layer porous silicon prepared properties PSi sample quantum confinement quantum dots Raman reaction recombination region relaxation resonance room temperature semiconductor shift shown in Fig shows silicon films solar cells solution spectroscopy spectrum sputtering structure substrate thermal thickness transition voltage wavelength X-ray X-ray diffraction