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Digital Alloys of AINAlGaN for Deep UV Light Emitting Diodes 7221 Sergey A NIKISHIN Mark Holtz and Henryk
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2005 The Japan absorption AlGaN AlInGaN angle annealing Appl Applied Physics atoms band gap beam BTNCs calculated carrier cell chemical vapor deposition configuration crystal curve decrease density deposited devices dielectric diffraction diodes dipole doping DWDM effect efficiency electric field electron emission energy epitaxial etching exciton experimental fabricated FDTD Figure function GaAs GaAsN grown growth IEEE increased InGaAs InGaN intensity interface irradiation Japan Society laser layer leakage LEDs Lett magnetic measured MEEF mode molecules nitride observed obtained October 11 optical gain output oxygen p-type parameters particle PAT6 peak phase photon Phys plasma polarization polymer published October 11 pulse quantum ratio reflective region resist respectively sample sapphire semiconductor shown in Fig shows silicon simulation Society of Applied solar cells spectra spectrum sputtered substrate surface temperature thermal thickness thin film transmissive voltage wafer wavelength