Synthesis of Broadband Distributed Interstage Matching Networks for 1 [mu (romanized Form)] - and 1/2 [mu (romanized Form)]-gate GaAs MESFET Amplifiers |
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Contents
Doublestage Broadband FET Amplifier 7 | 7 |
Input and Output Matching Networks Design | 25 |
Interstage Matching Networks Design | 57 |
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Common terms and phrases
0.5 dB gain amplifier design Amplifier with 2-8-2 Bandwidth broadband characteristic impedance Constraint for Input Constraint for Interstage curve pairs dB gain reduction dB ripple dB/oct gain slope dB/octave DISTRIBUTED EQUIRIPPLE MATCHING Distributed Model double stage amplifier ELEMENT VALUES EQUIRIPPLE MATCHING NETWORKS F GHz f(GHz FET model FET's field effect transistor GaAs FET amplifier Gain dB Gain Slope Distribution Gain-Bandwidth Constraint gain-bandwidth limitations high-pass impedance ratio impedance transformation ratio Initial and Optimized initial design input and output input matching network interstage matching network Low-Pass M₂ MAG and Gu Matching Networks N=6 microwave minimum phase Model of FET N₁ Optimized Gain Response optimized result output matching network output model reactive element absorption reflection coefficient Response for Double right half S-parameters shown in Figure single stage amplifier Slope 6 dB/oct Smith Chart VALUES FOR DISTRIBUTED VSWR w₁ X-plane