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30 2 rejected 75 transistors approximation assumption base region base spreading resistance base width beside each point bypass circuit calculated lifetime collector voltage computed cutoff frequency diffusion constant diffusion equation diffusion length Dimensionless units Early and Zawels emitter open-circuited empirical relations factor Figure final group fused-Junction transistors G W2 group of 75 GROUP OF FUSED-JUNCTION group of transistors h-parameters independent intrinsic hole density intrinsic transistor jimhos leakage lifetime in tenths linear function lot of transistors low-frequency circuit parameters low-frequency parameter measured values Measurement that varies microsecond minority carrier lifetime Motorola obtained ohms one-dimensional relations one-dimensional transistor partial derivative plot recombination length relation between Kp shows the relation significant departures substituting surface recombination theoretical relations total base Transistor Test Set transistor to transistor transistor with surface transistors actually measured true value umhos units APPENDIX Cont'd value of 150 variable varies erratically versus