Molecular Beam Epitaxy of Aluminum Gallium Arsenide on Channeled Substrates |
Common terms and phrases
acid ad-atom flux AlGaAs AlGaAs growth Appl atoms bandgap channeled substrate growth contaminants cross section dangling bond dependence desorption desorption rate epi-layer etch rate etch solution etch systems experimental facet lengths facet propagation GaAs gallium arsenide Gieson growth conditions growth interruption growth parameters growth rate H.P. Meier high temperature improved increase laser structure layer Lett m11)B sidewalls masked substrates MBE channeled substrate MBE growth MBE machines MBE system microns mole fraction molecular beam epitaxy monolayer morphology neighboring facets optical optimized overgrowth pattern profile photoresist Phys plasma ashing power output processing quantum well growth quantum well lasers Quantum well thicknesses redistribution RHEED ridges and grooves rotation semiconductor lasers shown in Figure sidewall angle sticking coefficient stripe width substrate temperature surface diffusion lengths surface energy surface reconstruction taper etching technique thesis threshold current densities VIII flux ratio wafer wet chemical etching wide ridge zincblend