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pn Junction Diodes and Transistors
18 other sections not shown
acceptor ampliﬁer annealing avalanche breakdown BARITT bombardment calculated carrier lifetime carrier removal rate Chapter charge conduction band current density damage constant decrease deﬁned degradation depletion region depletion width discussed displacements doping density dose drift velocity electric ﬁeld epitaxial equation experimental ﬁnd ﬁnished ﬁrst ﬂow FLUENCE forward bias Frenkel defects frequency GaAs gamma rays germanium Gunn diode IEEE Trans IMPATT oscillator increase injected ionizing radiation irradiation lattice atom layer measured microwave microwave semiconductor devices microwave transistors mixer n-region n-type n/cm neutron irradiation noise ﬁgure occur operation p-i-n diode p-n junction parameters permanent radiation Phys proﬁle proton pulse Radiation Damage radiation effects rads reactor recombination resistance result reverse bias sample Schottky-barrier diode Section seen shown in Figure shows silicon Spectrum substrate technique temperature trap TRAPATT tunnel diode typical V-I characteristic valence band versus neutron ﬂuence voltage width