Physics of semiconductor devices: proceedings of the Third International Workshop, Madras, India, November 27-December 2, 1985
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Physics of Semiconductor Devices: IWPSD, 2003 : Proceedings of the Twelfth ...
K. N. Bhat,Amitava DasGupta
No preview available - 2004
Recent Fundamental and Applied Developments in the
MicroElectronics in the Future
Numerical Investigation of GaAs MESFETs and InGaAs
26 other sections not shown
a-Si active layer annealing Appl applications band barrier height bipolar transistors breakdown voltage built-in field capacitance capacitors channel characteristics circuits concentration conduction current gain curves defects density depletion deposition diode distribution doping drain effect efficiency electric field electron emitter energy equation etch experimental fabricated Figure films frequency function GaAs GaAs MESFETs gate length grain boundaries growth HEMT IEEE Trans impurity increase injection level insulator interface ion implantation Lett material measured MESFET metal minority carrier mobility modules obtained ohmic contacts optical oxide oxide layer oxygen p-n junction p-type parameters photocathode photovoltaic Phys polycrystalline polycrystalline silicon polysilicon recombination rectifier reduced region resistance Schottky Schottky diodes sheet resistance shown in Fig side gating silicon solar cells Solid Solid State Electron space charge structure substrate surface switching technique temperature thermal thin threshold voltage thyristor traps values velocity wafers