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Numerically Simulated and Experimentally Obtained XRay Section 3779 Kouhei Okitsu Satoshi Iida Yoshimitsu Sugita
Heteroepitaxial Growth of GaNijP jcsO 09 on Sapphire 3791 Osamu Igarashi
41 other sections not shown
alignment angle annealing Appl atoms bonding borosilicate glass calculated cathode cells chalcogenide glass chemical chemical vapor deposition coatings concentration constant cordierite crystal deconvoluted decreases defect density deposition devices dielectric dielectric constant diffusion effect electric emission energy etching evaporation experimental exposure fabricated field Figure GaAs gas flow rates glass growth increase intensity irradiation laser laser-quenched lattice lattice constant layer Lett lithography magnetron mask measured method molecular MPPC observed obtained optical oxide oxygen parameters pattern PbCdS peak phase shift phase-shifting mask photon Phys plasma polarization pressure Proc pulse ratio reaction refractive index resist RF power ridge samples shifter shown in Fig shows signal SiH4 silicon silicon nitride simulation sintering spectra spectrum sputtering structure substrate substrate temperature superconducting surface Technol thermal thickness tion Torr voltage wafer waveguide wavelength width X-ray diffraction X-ray lithography Zr-N films