Semiconductor Materials for Optoelectronics and Ltmbe Materials: Proceedings
Symposium a on Semiconductor Materials for Optoelectronic Devices and, C. Whitehouse, J. P. Hirtz, H. P. Meier
Elsevier Science Ltd, 1993 - Science - 368 pages
These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics.Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.
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Organizers and Sponsors xii
EPITAXY FOR OPTOELECTRONIC APPLICATIONS
research for novel metalorganic precursors
21 other sections not shown
absorption AlGaAs annealing Appl atoms band gap barrier BH lasers bias buffer layer calculated cap layer chemical beam epitaxy coefficient composition concentration Cryst crystal decrease defects density devices diffusion diode dislocations doping effect electron Elsevier Sequoia emission epilayer etching exciton experimental FeSi2 film function FWHM GaAs layer GaInAs GaInAsP growth temperature heterostructure IEEE implantation increase InGaAs InSb interdiffusion interface investigated laser diodes lattice layer structure layer thickness Lett low temperature LT GaAs luminescence mask material measurements MESFET metal-organic modulation molecular beam epitaxy MOVPE observed obtained optical optoelectronic p-type parameters peak phonon photocurrent photoluminescence Phys properties quantum Raman region room temperature samples Schottky semiconductor shadow mask shift shown in Fig shows silicon spectra spectrum strain superlattice surface Technol thermal threshold current tion transition ture undoped valence band vapour pressure voltage wafer wavelength width ZnSe