Polycrystalline Silicon Thin Film Transistors for Active Matrix Guest-host Liquid Crystal DisplaysCornell University, 1990 - 702 pages |
Contents
Active Matrix Liquid Crystal Displays 1 | 14 |
Electrical Properties of Polysilicon | 33 |
Physical Properties of Polysilicon | 71 |
Copyright | |
9 other sections not shown
Common terms and phrases
30 min hydrogenation activation energy active matrix ambient amorphous silicon annealing Baccarani band barrier height boundary potential barrier boundary trap density channel polysilicon charge CMOS CMOS inverter conduction decrease depletion deposited devices processed diffusion dislocations dopant dopant concentration doping drain-source potential drive effects electric field electron equation etch Fermi level function of gate gate length gate oxidation gate potential gated TFT grain boundary potential grain boundary trap guest-host hydrogenation IEEE implant increase interface Kamins layer LCDs leakage current Lett liquid crystal displays LPCVD material measured MOSFET n-type TFTs non-hydrogenated pads photoresist Phys pixel Plot point defects polycrystalline silicon polysilicon films polysilicon TFTs Poole-Frenkel quasi-neutral region semiconductor shown in Figure silicon dioxide single crystal silicon slope source and drain Step substrate symmetric TFTs fabricated thermionic emission thin film transistors threshold voltage transfer characteristics triple gated twisted nematic undoped volts wafer