Photon, Beam and Plasma Assisted Processing: Fundamentals and Device TechnologyE.F. Krimmel, I.W. Boyd This symposium attracted 82 papers which were presented orally or as posters. Fourteen invited speakers presented state of the art reviews and aspects of future key topics in this increasingly important area of materials science. The high level of scientific presentation during the conference enhanced the aim of the symposium, which was to stimulate discussion amongst materials scientists, chemists, engineers and physicists with a common interest in this field and to disseminate knowledge of progress. |
Contents
| 1 | |
| 23 | |
ETCHING | 257 |
DOPING | 373 |
INFLUENCE OF DUV EXCIMER LASER RADIATION λ 193 nm
ON CMOS DEVICES | 421 |
AUTHOR INDEX OF PROCEEDINGS OF SYMPOSIUM B | 681 |
| 689 | |
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a-Si ablation absorption adsorption amorphous annealing Appl argon B.V. North-Holland Physics c-Si chemical concentration crystalline crystallization decrease deposition rate desorption devices diffusion dopant doping dose electron beam Elsevier Science Publishers energy density epitaxial etch rate etching excimer laser experimental fluence focused ion beam formation GaAs gas phase growth heat increase interface ion beam irradiation laser beam laser irradiation laser power layer material mbar measurements melting metal molecules nitridation North-Holland Physics Publishing nucleation observed obtained optical overlayer oxide oxygen parameters peak photodeposition photolysis Phys Physics Publishing Division plasma polycrystalline silicon polysilicon pressure Proc produced Publishers B.V. North-Holland rapid thermal annealing reaction sample Science Publishers B.V. sheet resistance shown in fig shows SiH4 silane silicide silicon SiO2 species spectra spectrum sputtering stoichiometry structure substrate substrate temperature surface Symp technique Technol thermal thickness tion Torr Vacuum Sci wafer wavelength