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ATOMIC BONDING AND CRYSTAL TYPES
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absorption acceptor Appl applied atoms base region bias bond calculated capacitance carrier concentration charge circuit coefficient collector compounds conduction band conduction-band constant covalent covalent bond crystal current density curve dielectric dielectric constant diffusion diode dipole discussed in Section distribution donor doping drift velocity effective mass electric field Electron Devices emission emitter energy equation excess carriers Fermi level Figure frequency GaAs gate germanium given by Eq hence hole concentration IEEE impurity concentration injection interface ionic ionization laser lattice layer Lett metal mobility molecule MOSFET n-type n-type semiconductor obtain optical oxide p-n junction p-n-p transistor phonon photoconductive Phys polarization potential quantity quantum ratio recombination represents result sample scattering semiconductor shown in Fig shows silicon solid solution space-charge region structure substrate surface temperature thermal tion transistor transition tunneling valence band vector velocity voltage wave function width zero