Technology of Gallium Nitride Crystal GrowthDirk Ehrentraut, Elke Meissner, Michal Bockowski This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. |
Other editions - View all
Technology of Gallium Nitride Crystal Growth Dirk Ehrentraut,Elke Meissner,Michal Bockowski No preview available - 2010 |
Technology of Gallium Nitride Crystal Growth Dirk Ehrentraut,Elke Meissner,Michal Bockowski No preview available - 2012 |
Technology of Gallium Nitride Crystal Growth Dirk Ehrentraut,Elke Meissner,Michal Bockowski No preview available - 2010 |
Common terms and phrases
addition ammonia ammonothermal annihilation Appl applications atoms bulk GaN carrier compared concentration conductivity cost Cryst crystals grown curve defects density dependence described device direction dislocation dislocation density effect electron energy epitaxial etching experimental face Figure flow formation formed function GaAs gallium GaN crystals GaN films GaN layer GaN substrates grow grown growth rate hexagonal higher HVPE important improved impurities increase indicates laser lattice Lett lifetime light lower material measured method mineralizer nitride nitrogen nonpolar observed obtained peak performance phase Phys pits plane polar positron present pressure produce properties range reaction reduced reflection region reported respectively samples sapphire seed shown shows solubility solution spectra structural surface technique temperature thermal thick tion typical vacancies vapor wafers zone