Optical and Electronic Process of Nano-MattersMotoichi Ohtsu Sizes of electronic and photonic devices are decreasing drastically in order to increase the degree of integration for large-capacity and ultrahigh speed signal transmission and information processing. This miniaturization must be rapidly progressed from now onward. For this progress, the sizes of materials for composing these devices will be also decreased to several nanometers. If such a nanometer-sized material is combined with the photons and/or some other fields, it can exhibit specific characters, which are considerably different from those ofbulky macroscopic systems. This combined system has been called as a mesoscopic system. The first purpose of this book is to study the physics of the mesoscopic system. For this study, it is essential to diagnose the characteristics of miniaturized devices and materials with the spatial resolution as high as several nanometers or even higher. Therefore, novel methods, e.g., scanning probe microscopy, should be developed for such the high-resolution diagnostics. The second purpose of this book is to explore the possibility of developing new methods for these diagnostics by utilizing local interaction between materials and electron, photon, atomic force, and so on. Conformation and structure of the materials of the mesoscopic system can be modified by enhancing the local interaction between the materials and electromagnetic field. This modification can suggest the possibility of novel nano-fabrication methods. The third purpose of this book is to explore the methods for such nano-fabrication. |
Contents
| 1 | |
| 3 | |
| 4 | |
| 6 | |
1 | 18 |
7 | 34 |
8 | 40 |
9 | 46 |
Chapter 5 | 147 |
M Tsukada N Sasaki and N Kobayashi | 178 |
TUNNELINGELECTRON LUMINESCENCE MICROSCOPY | 181 |
Chapter 7 | 200 |
T Saiki | 217 |
Chapter 8 | 219 |
M Ohtsu¹2 and G H Lee² | 233 |
NONCONTACT ATOMIC FORCE MICROSCOPY | 235 |
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absorption AFM image amplitude aperture Appl atomic resolution behavior bias voltage calculated cantilever charge circuit coherent configuration corresponds Coulomb coupled mode decoherence density detection dielectric double dot effect electric electromagnetic field electron beam electron tunneling electronic devices electronic systems electrostatic force evanescent wave excitation experimental fabricated fiber frequency shift curve function gate voltage interaction interface layer Lett luminescence measured mesoscopic metal film gap microscopic microwave modulation molecular molecules momentum nanometer nanostructures noncontact AFM number of electrons observed obtained optical fiber optical field optical near-field oscillation peaks phase photon photon emission Phys plasmon polariton properties quantum dot quantum mechanical region resonance sample surface scanning tunneling Scanning Tunneling Microscopy scattering semiconductor shown in Fig shows signal single electron spatial resolution spectra spectroscopy spectrum spin STM images structure substrate temperature theoretical thickness tip apex TL intensity transition tunneling current tunneling electrons vertical wavelength width