A BASIC program for calculating dopant density profiles from capacitance-voltage data
U.S. Dept. of Commerce, National Bureau of Standards : for sale by the Supt. of Docs., U.S. Govt. Print. Off., 1975 - Computers - 33 pages
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A(UM automatic data processing back depletion correction background dopant density Buehler built-in voltage Bureau of Standards C-V data C-V pair calculated from eq calculated in lines calculating dopant density CALCULATION USING PROGRAM capacitance-voltage data carriage spaces centimetres CHAR/DEC complementary error function computer program consists of lines continued fraction CVIN data point depletion region depletion width depth axis DIAMETER MILS diffused layer diodes diffused dopant density axis dopant density profile epitaxial equations erfc erfc(x experimental Figure Gaussian diffusion GOSUB INERF subroutine JCT DEPTH junction depth line number LINES/UM listing of Appendix main program micrometres National Bureau NBVSB number of carriage numerical integration p-n junction diode parabolic fit plane capacitance PLOT subroutine Profiles from Capacitance-Voltage program CV1 rectangular diodes sample calculation scaling parameters Semiconductor Measurement Technology set equal Silicon solve eq SURFACE DENS TABLE data file Technical teletypewriter tick marks true Gaussian plot true Gaussian profile Yl pair