A low-power dynamic variable-gain amplifier for ultrasonic imaging systems
Stanford University. Stanford Electronics Laboratories, James C. Long, Stanford University. Stanford Electronics Laboratories. Integrated Circuits Laboratory
Dept. of Electrical Engineering, 1978 - Field-effect transistors - 178 pages
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B JFET Characteristics
5 other sections not shown
bandwidth bias current bipolar transistors boron breadboard breadboard amplifier calculated capacitance caused Channel 2Dt channel doping profile CHANNEL SHEET RESISTANCE Chapter circuit in Fig common-mode concentration constant deep-implanted JFET DELAY LINES depletion width devices dopant DOPING-DENSITY PROFILE double-diffused JFET drain-to-source emitter current emitter follower epitaxial equivalent circuit fabricated feedback network Figure fractional gain error gain precision Gain-control method gate-to-source voltage imaging system integrated circuit integrated version ion implantation ion-implanted JFET channel JFET electrical parameters JFET pinchoff voltage JFET structures junction load resistor maximum gain noise figure output voltage oxide p-n Junction peak percent photolithography pinchoff voltage pole power drain power-supply voltage predicted range ratio result schematic sensor shallow implanted JFET sidelobe signal level silicon silicon dioxide supply voltage surface temperature theoretical tolerance TOP GATE DEPTH transconductance transistors ULISYS variable-gain amplifier variable-gain stage variable-gain techniques variation VOLTAGE AND CHANNEL voltage gain width