## A new approach to reflection polarization problems with application to the microwave magneto-Kerr effect in indium antimonide |

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2p sample anisotropic material applied magnetic field approximation arbitrary geometry Kerr assume three carriers band structure calculated results assume carriers populating isotropic Chapter conduction band crystal axis dependence derived determined direct gap direction of propagation doped effect in InSb effect in semiconductors effective masses electron mobility equation Faraday Faraday-type Kerr effect form of superposition geometry Kerr effect given in Eq heavy hole mobility hole band hole scattering indicate INDIUM ANTIMONIDE interface interference region Jones matrix formalism Jones scalars Jones vector laboratory coordinate system light holes magnetic field magneto-anisotropic measured and calculated microwave magneto-Kerr effect normal mode obtained odd function optical phonons orientation p-type parabolic energy bands permittivity Phys Poincare sphere propagation constant R.J. Vernon relaxation room temperature scattering mechanisms semiconductors possessing shown sin2 spherical constant energy superposition is valid superposition property theoretical three carriers populating tion valence bands Voigt-type Kerr effect warping zero zincblende