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THE GaAs MESFET S0ME THEORETICAL
PHYSICAL AND MATERIALS LIMITATI0NS
LIQUID PHASE EPITAXIAL GR0WTH F0R MESFETs
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0hmic active channel active layer Air-bridge alloyed aluminum molefraction baked behavior Bias Voltage boat breakdown voltage Buffer Layer System burnout voltage Channel Current chlorobenzene chromium Contact Resistance Cr doped Cr Trap Curve Tracer depletion region doping levels drain bias drain current drain edge drain to gate Drain-to-Gate Spacing Drift Mobility EBIC effects electric field electric field region electron beam electroplated epitaxial etch Figure frequency GaAlAs GaAs Buffer Layer GaAs MESFET gate bias conditions gate length gate spacing gate width hence high electric field high purity higher I-V characteristics impurity increase injection interface leakage current limited mask material measurements melt mesa edge metallization microwave negative resistance observed obtained occurs ohmic contact oxide parameters parasitic peak photoresist power MESFET problems saturation current semi-insulating GaAlAs shown in Fig shows space charge stationary domain substrate technique thermal transconductance trap level undoped buffer layer Voltage Profile wafer ym gate