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DESCRIPTION OF THE DIODE AND TUNNEL LASERS
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absorption coefficient active region angular frequency Appendix attenuation suffered carrier coefficient g component conduction band device diffraction diffusion length diode and tunnel diode laser Distribution in Diode dopant elec electrons and holes Energy Level Diagram Fabry-Perot surfaces free-carrier absorption gain coefficient Gallium Arsenide Idealized Energy Level Idealized Spatial Energy injection current density interband inverted population junction region laser action Laser After Bias laser radiation lasing mode Light Emission loss coefficient loss mechanism loss per unit Lttrs magnetic metal block metal boundaries metal walls microns n-type GaAs n-type semiconductor p-n Junctions photon wave Phys population inversion power loss power transferred Proc R. H. Rediker radiative recombination Section semiconductor region semiconductor slab Spatial Energy Distribution spon spontaneous emission stimulated emission substituted into Equation Substituting Equations thickness threshold analysis threshold current density TM wave Tunnel Injection Laser tunnel laser unit length valance band wave type Waves Between Conducting written in terms