Acoustic Wave Semiconductor Convolver Applied to Electrical and Optical Signal Processing
This work presents an experimental and theoretical study of the interactions between acoustic surface waves on a piezoelectric insulator and charge carriers in a neighboring semiconductor separated by a small airgap; and the application of these phenomena to signal processing and optical imaging. Although the two media are mechanically isolated, the electric field associated with the surface waves penetrate into the semiconductor and interact with its charge carriers. This interaction is nonlinear, and, in the case of two oppositely propagating surface waves, real time convolution is performed. A new theory of the convolution interaction, taking into account the possible presence of a depletion, inversion or accumulation layer at the surface of the semiconductor, resulting from a built-in or applied dc field is presented. Experimental measurements for both n- and p-type Silicon on Lithium Niobate systems are in very good agreement with this theory, and they lead to a novel technique of measurement of the surface state distribution on semiconductors. The silicon on lithium niobate structure used gives rise to one of the largest convolution efficiencies reported to date. Several signal processing applications are presented. They show the versatility of the device which can be employed as a programmable filter or a parametric processor. In addition, the first autocorrelation is demonstrated by cascading two convolvers. The acoustic convolver was adapted for the scanning of optical images.
What people are saying - Write a review
We haven't found any reviews in the usual places.
GENERAL CONVOLUTION THEORY AND EXPERIMENTAL
APPLICATIONS OF THE SEMICONDUCTOR CONVOLVER
OPTICAL SIGNAL PROCESSING AND IMAGING
2 other sections not shown
accumulation acoustic convolver acoustic surface waves acoustic wave airgap amplitude approximately bandwidth bias voltage bulk capacitance carrier concentration carrier density center frequencies charge chirp rate chirped signals circuit convolution efficiency convolution output convolution power corresponds curve dark current dark signal dc bias dc surface potential Debye length delay line depletion layer dynamic range electric field electron experimental Fourier transform frequency offset Fresnel transform function G. S. Kino grating hence IEEE Ultrasonics Symposium imaging system input signals interaction interdigital transducers inversion layer light sensitivity LiNbO Lithium Niobate measured minority carriers modulation n-type semiconductor n-type silicon nondegenerate nondegenerate convolution nonlinear coupling obtained output voltage oxide parametric Phys present propagation constant propagation loss pulsed bias reduced scanning pulse semi semiconductor convolver semiconductor surface shown in Fig signal processing signal-to-noise ratio spectrum analyzer surface state density surface state distribution theoretical theory tion transducers uniform velocity width