Acoustic Wave Semiconductor Convolver Applied to Electrical and Optical Signal Processing

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Stanford University., 1975 - Acoustic surface acoustic wave devices - 171 pages
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This work presents an experimental and theoretical study of the interactions between acoustic surface waves on a piezoelectric insulator and charge carriers in a neighboring semiconductor separated by a small airgap; and the application of these phenomena to signal processing and optical imaging. Although the two media are mechanically isolated, the electric field associated with the surface waves penetrate into the semiconductor and interact with its charge carriers. This interaction is nonlinear, and, in the case of two oppositely propagating surface waves, real time convolution is performed. A new theory of the convolution interaction, taking into account the possible presence of a depletion, inversion or accumulation layer at the surface of the semiconductor, resulting from a built-in or applied dc field is presented. Experimental measurements for both n- and p-type Silicon on Lithium Niobate systems are in very good agreement with this theory, and they lead to a novel technique of measurement of the surface state distribution on semiconductors. The silicon on lithium niobate structure used gives rise to one of the largest convolution efficiencies reported to date. Several signal processing applications are presented. They show the versatility of the device which can be employed as a programmable filter or a parametric processor. In addition, the first autocorrelation is demonstrated by cascading two convolvers. The acoustic convolver was adapted for the scanning of optical images.

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Contents

GENERAL CONVOLUTION THEORY AND EXPERIMENTAL
7
APPLICATIONS OF THE SEMICONDUCTOR CONVOLVER
70
OPTICAL SIGNAL PROCESSING AND IMAGING
92

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