Advanced Luminescent Materials and Quantum Confinement: Proceedings of the International SymposiumM. Cahay |
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Common terms and phrases
absorption adatom anodic oxidation Appl atoms band gap barrier bias bonds bulk calculated clusters cm¹ conduction band Coulomb coupling crystal current density dangling bonds decrease detection detector device dislocations dispersion doped edge effect electroluminescence electron emission energy epitaxy excitation exciton experimental fabricated Figure film frequency function GaAs gate grown Hamiltonian increase infrared Intensity arb interface laser lattice layer Lett light luminescence magnetic measured nanoclusters nanocrystals observed obtained operation oscillation parameters particles peak phonon photocurrent photoluminescence Phys PL intensity PL spectra plasma plasmon polarization porous silicon potential PS-FPR quantum confinement quantum dots quantum wire QWIP Raman scattering recombination refractive index region resonance room temperature samples semiconductor shift shown in Fig shows spectrum structure substrate superlattice surface technique thermal thickness transition UHV-CVD valence band VLWIR voltage wafer Wavelength nm wavy superlattices width X-ray
Popular passages
Page 381 - This research was partly supported by research fellowships of the Japan Society for the Promotion of Science for Young Scientists.
Page 239 - DMR 8818412, and the Division of Materials Sciences, Office of Basic Energy Sciences, US Department of Energy, under Contract DE-AC05-84OR21400 with Martin Marietta Energy Systems, Inc.
Page 266 - ... 1. Introduction Recently, there has been a great interest in the study of nano-scale materials since they provide us a wide variety of academic problems as well as the technological applications [1-3].
Page 35 - Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan ABSTRACT Some optoelectronic effects in porous Si (PS) have been investigated in relation to the visible luminescence mechanism.
Page 152 - This change is measured as the material's refractive index and is expressed as: n = c/v (Equation 3) where n is the refractive index, c is the speed of light in vacuum and v is the speed of light in a material (Equation 3).
Page 174 - This work was supported in part by the Research for the Future Program of the Japan Society for the Promotion of Science (Project No. JSPS-RFTF96P00201), Grant in-aid of Priority Area by Ministry of Education, Science and Culture, and University-Industry Joint Project on Quantum Nanostructures.
Page 307 - Y. Takahashi, M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, Y. Nakajima, S. Horiguchi, K. Murase. and M. Tabe, Electron. Lett., 31, 1 36 (1995).
Page 257 - Transition of an electron from the valence band to the conduction band by light absorption (see text).
Page 325 - Electrical Engineering Department University of California - Los Angeles Los Angeles, CA 90095...
Page 65 - It should be noted that the Si-Ca bond at the interface is somewhat intermediate between the covalent Si-Si bond and the ionic Ca-F bond, therefore the bondingantibonding interface states are not completely removed from the gap as in the case of the H-saturated structures.