Advanced Luminescent Materials and Quantum Confinement: Proceedings of the International Symposium
M. Cahay, S. Bandyopadhyay, David J. Lockwood
The Electrochemical Society, 1999 - Technology & Engineering - 504 pages
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absorption Appl applied atoms band barrier bias bonds bulk calculated charge clusters compared conduction confinement corresponding coupling crystal current density decrease density dependence detection device direction discussed distribution doped edge effect efficiency electron emission energy excitation experimental Figure frequency function GaAs gate given grown growth higher increase indicate intensity interface islands laser lattice layer Lett light lower luminescence material measured modes nanocrystals observed obtained operation optical oxidation particles peak performed period phonon photoluminescence Phys polarization positive potential present properties quantum dots QWIP Raman range reflectance region respectively response samples scattering semiconductor shift shown in Fig shows silicon similar solid space spectra spectrum structure substrate superlattice surface technique temperature thickness threshold transition units voltage wavelength wire
Page 381 - This research was partly supported by research fellowships of the Japan Society for the Promotion of Science for Young Scientists.
Page 266 - ... 1. Introduction Recently, there has been a great interest in the study of nano-scale materials since they provide us a wide variety of academic problems as well as the technological applications [1-3].
Page 35 - Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan ABSTRACT Some optoelectronic effects in porous Si (PS) have been investigated in relation to the visible luminescence mechanism.
Page 152 - This change is measured as the material's refractive index and is expressed as: n = c/v (Equation 3) where n is the refractive index, c is the speed of light in vacuum and v is the speed of light in a material (Equation 3).
Page 174 - This work was supported in part by the Research for the Future Program of the Japan Society for the Promotion of Science (Project No. JSPS-RFTF96P00201), Grant in-aid of Priority Area by Ministry of Education, Science and Culture, and University-Industry Joint Project on Quantum Nanostructures.
Page 307 - Y. Takahashi, M. Nagase, H. Namatsu, K. Kurihara, K. Iwadate, Y. Nakajima, S. Horiguchi, K. Murase. and M. Tabe, Electron. Lett., 31, 1 36 (1995).
Page 257 - Transition of an electron from the valence band to the conduction band by light absorption (see text).
Page 325 - Electrical Engineering Department University of California - Los Angeles Los Angeles, CA 90095...
Page 65 - It should be noted that the Si-Ca bond at the interface is somewhat intermediate between the covalent Si-Si bond and the ionic Ca-F bond, therefore the bondingantibonding interface states are not completely removed from the gap as in the case of the H-saturated structures.