Advanced Metallization Conference 2003 (AMC 2003):
G. W. Ray, T. S. Smy, T. Ohta, M. Tsujimura
Materials Research Society, Jan 1, 2004 - Technology & Engineering - 792 pages
The Advanced Metallization Conference (AMC) marked its twentieth anniversary in 2003. Technical leaders from around the world gather to discuss developments in the areas of interconnect performance, advanced metallization, low-dielectric constant materials, barrier metallization, atomic layer deposition, vertical integration, advanced packaging and optical interconnects. In particular, presentations highlight both the advances and future challenges associated with multilevel interconnect. The latest developments in the integration of copper-based metallization with low-dielectric constant materials, and advances in the understanding of copper morphology and the reliability of the component materials of interconnect systems, are featured. Additional contributions discuss the development of advanced materials and advanced process technologies. Optimization of interconnect performance and density, and alternatives to metal-based interconnect, are addressed in papers on interconnect performance issues, vertical integration and system-in-a-package versus system-on-a-chip.
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2004 Materials Research adhesion annealing aspect ratio barrier layer barrier metal bumps capacitance capacitors capping layer chemical chemical vapor deposition cleaning CMP process Conference Proceedings AMC copper cross-section crosstalk current density damascene structure decrease defects delamination device dielectric constant diffusion barrier dual damascene effect electrical electroless electromigration electron electroplating etch evaluated fabricated failure fluorine grain boundary hard mask IEEE improved increase inductor integration interface leakage current lifetime line width low-k low-k dielectric low-k material Materials Research Society measured mechanical MV/cm node observed oxide pattern performance plating polishing pore porosity porous SiLK precursor Proc Proceedings AMC XIX properties reduced reliability resin samples seed layer Semiconductor sheet resistance shown in Figure shows SiCN sidewall silicon SiLK film simulation SiOC slurry sputtering stack step coverage stress substrate surface tantalum TDDB technique temperature thermal trench void voltage wafer wiring