Advanced Metallization Conference 2005 (AMC 2005):
S. H. Brongersma, T. C. Taylor, M. Tsujimura, K. Masu
Materials Research Society, Jan 1, 2006 - Technology & Engineering - 755 pages
Technical leaders from around the world gather here to discuss developments in the areas of interconnect performance, advanced metallization, low-dielectric constant materials, barrier metallization, atomic layer deposition, advanced packaging and vertical integration. Both current state-of-the-art and ongoing challenges associated with multilevel interconnect are addressed. Included are papers on the latest developments in the integration of low-dielectric constant materials with copper-based metallization, and advances in the understanding of means by which process- or stress-induced damage can be mitigated and reliability of the interconnect system improved. Additional contributions discuss the design, development and modeling of advanced on-chip and multichip interconnect architectures and real-world implementation of optimized designs, materials and processes for production of leading-edge microelectronic devices.
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The Impact of Wave Pipelining on Future Interconnect
Interconnect Modeling and Analysis in the Nanometer
High Frequency Characterization of CopperLowk
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2006 Materials Research adhesion air gaps anneal Atomic Layer Deposition barrier metal BEOL bonding capacitance capping layer chemical chemistry Conference Proceedings AMC copper damage damascene decrease defect degradation density deposition devices dielectric constant diffusion barrier dual damascene e-beam effect elastic modulus electrical electroless electromigration electron electroplating etch evaluated failure grain IEEE improved integration interface line resistance line width low-k films low-k materials lower Materials Research Society measured mechanical modulus observed oxide parylene pattern peak PECVD performance planarization plasma plating pore porogen porous low-k precursor Proc Proceedings AMC XXI properties ratio reduced reliability samples seed layer Semiconductor sheet resistance shown in Figure shows SiCN SiCOH sidewall silicide silylation SiOC SiOC film spectra sputter stack stress structure substrate surface TDDB temperature thermal thin treatment trench UV cure wafer wet etch wiring yield Young's modulus