Advanced Metallization and Interconnect Systems for ULSI Applications in 1996:, Volume 12
Materials Research Society, 1997 - Computers - 608 pages
The scope of this volume has gradually expanded from its initial focus on metal deposition to include all aspects of multilevel interconnect fabrication including conductors, dielectrics, planarization, integration and reliability. At the same time, it has also retained its original emphasis on leading-edge material, interface and process science that has made the series so unique. The volume features a keynote address on "Scaling High-Performance Interconnects".
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Scaling of HighPerformance Interconnects
The Chemical Vapor Deposition of Aluminum
Overview of HighPressure Aluminum Processing for ULSI
62 other sections not shown
Advanced Metallization aluminum annealing aspect ratio atoms barrier metal binding energy bottom coverage carrier film chemical mechanical polishing chemical vapor deposition concentration contact hole contact resistivity copper CVD TiN damascene decrease density deposition rate deposition temperature dielectric constant diffusion barrier DMAH e-beam effect electrical electromigration electron feature filling films deposited flow fluorine flux grain boundary growth improved increase integrated interconnect interface layer low-k lower material measured mesoscopic scale metal lines microstructure MOCVD nitridation nucleation observed obtained oxide PACVD particle pattern PECVD planarization plasma plug polish rate polymer precursor pressure Proc properties reaction reactor reduced reflow removal rate samples Semiconductor sheet resistance shown in Figure shows sidewall silane silica silicide silicon simulation slurry spectra sputtering step coverage stress structure substrate TDMAT thermal thin Ti/TiN TiN films TiSi2 trench ULSI ULSI Applications vias wafer xerogel