Advanced Metallization and Interconnect Systems for ULSI Applications in 1996: Volume 12Robert Havemann The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. |
Contents
Scaling of HighPerformance Interconnects | 3 |
The Chemical Vapor Deposition of Aluminum | 13 |
Overview of HighPressure Aluminum Processing for ULSI | 23 |
Copyright | |
64 other sections not shown
Common terms and phrases
1997 Materials Research aluminum annealing aspect ratio atoms binding energy bottom coverage carrier film chemical mechanical polishing chemical vapor deposition concentration Conference Proceedings ULSI contact hole contact resistivity copper CVD TiN damascene decrease density deposition rate deposition temperature dielectric constant diffusion barrier DMAH e-beam effect electromigration electron feature filling films deposited flow fluorine flux grain boundary growth increase integrated interconnect interface layer low-k Materials Research Society measured microstructure MOCVD nitridation nucleation oxide PACVD particle pattern PECVD planarization plasma plug polish rate polymer precursor pressure Proceedings ULSI XII properties reaction reactor reflow removal rate samples sheet resistance shown in Figure shows sidewall silane silicide silicon simulation SiO2 slurry spectra sputtering step coverage step height stress structure substrate TDMAT thermal thin Ti/TiN TiN film TiSi2 trench ULSI ULSI Applications vias Von Mises stress wafer xerogel