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Short develop time process with novel develop application system 5376156
Necessity of chemicol edge bead removal in modernday lithographic processing
Critical dimension control in 90nm to 65nm node 5376158
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acid diffusion Advances in Resist ammonia application bake temperature BARC BARC thickness base Bi/In bilayer resist capacitance CD variation Clariant crosslinking defects deposition deprotection device dispense dissolution rate edge effect electron electron beam lithography etch rate ethyl lactate evaluated experimental exposed exposure dose fabrication ﬁll ﬁlm thickness ﬁrst ﬂow focus formulation hardmask HFAPNB improved increase inﬂuence isofocal J/cm laser layer lithography mask material measured negative resist optical optimization organic BARC outgassing parameters pattem pattern collapse PEB sensitivity PEB temperature photoacid photolithography photoresist planarization plasma etching polymer Proc process window Processing XXI proﬁle puddle reaction reduce reﬂectivity resist film resist pattern resist process Resist Technology rinse samples Semiconductor shown in Figure shows sidewall signiﬁcant simulation solution solvent SPIE SPIE Vol spin bowl spin coated structure substrate surface surfactant thermal TMAH Tokyo Electron unexposed wavelength