Advances in resist technology and processing VI: 27 February-1 March 1989, San Jose, California
SPIE--the International Society for Optical Engineering, 1989 - Computers - 620 pages
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MULTILAYER RESIST CHEMISTRY AND PROCESSING
RESIST CHEMISTRY AND PROCESSING
3 other sections not shown
absorbance absorption acid Advances in Resist ARC-XL bake temperature bias carboxylic acid chemical coated concentration contrast coumarin crosslinking curcumin curve deep UV DESIRE process development rate diffusion dissolution rate dyed resists effect ester etch rate excimer laser experimental exposed exposure dose exposure latitude film thickness flood exposure function g-line high resolution hot plate image reversal increase ion beam lines and spaces linewidth lithography mask measured metal micron monomer naphthoquinone negative resists novolak resin obtained optical oxide layer oxygen p-cresol parameters phenol photolithography photoresist photospeed plasma plasma polymerized Plasmask PMGI polyimide polymer polystyrene positive photoresists positive resist Proc process latitude reaction resin resist films resist patterns resist process resist systems Resist Technology resist thickness sample sensitivity shown in Figure shows silicon silylation simulation soft bake softbake solubility solvent spectra SPIE spin coated stepper structure substrate surface thermal unexposed wafer wavelength