What people are saying - Write a review
We haven't found any reviews in the usual places.
The Experimental Apparatus
Chapter 3? Evaluation of the Epitaxial Layers 20
Chapter hi Conclusions and Suggestions for Future Work
1 other sections not shown
Angle lapping fixtures Arkle reaction arrangement see Fig atoms of reactant Autodoping chemical reaction coil cooler crown effect crystal crystalline quality density or damage dependence of growth deposition rate device fabrication dilution ratio dislocations dopant atoms doping dust particle enters the reaction epitaxial layer Equation EXAMPLE OF ORANGE EXAMPLE OF STACKING EXAMPLE OF VOIDS EXCESSIVE CHEMICAL ETCHING external pressure gas flow gas stream germanium tetrachloride i/min impurity profile junction leaves the bubbler liquid is roughly microns microns/hour microns/minute mole ratio nucleation center number of atoms number of moles observed obtained ORANGE PEEL orientation parameter partial pressure pedestal Polycrystalline pressure of germanium probe structure pyrolysis Raoult's Law reaction chamber reaction rate resistivity result shown in Fig silicon tetrachloride slices solution spike stacking fault surface catalyzed taxial layer ted substrate Theuerer Timer Used 7-I total number turbulence University of Wisconsin VAPOR PHASE EPITAXIAL vapor phase reaction vapor pressure x/min