Auger Electron Spectroscopy Study of Surface Segregation in the Binary Alloys Copper - 1 Atomic Percent Indium, Copper - 2 Atomic Percent Tin, and Iron - 6.55 Atomic Percent Silicon
National Aeronautics and Space Administration, 1973 - Auger electron spectroscopy - 20 pages
Auger electron spectroscopy was used to examine surface segregation in the binary alloys copper-1 at. % indium, copper-2 at. % tin and iron-6.55 at. % silicon. The copper-tin and copper-indium alloys were single crystals oriented with the /111/ direction normal to the surface. An iron-6.5 at. % silicon alloy was studied (a single crystal oriented in the /100/ direction for study of a (100) surface). It was found that surface segregation occurred following sputtering in all cases. Only the iron-silicon single crystal alloy exhibited equilibrium segregation (i.e., reversibility of surface concentration with temperature) for which at present we have no explanation. McLean's analysis for equilibrium segregation at grain boundaries did not apply to the present results, despite the successful application to dilute copper-aluminum alloys. The relation of solute atomic size and solubility to surface segregation is discussed. Estimates of the depth of segregation in the copper-tin alloy indicate that it is of the order of a monolayer surface film.
What people are saying - Write a review
We haven't found any reviews in the usual places.
activation energy adhesion AES spectrum AES traces alloys studied argon ATOMIC PERCENT Auger Electron Spectroscopy Auger peak height binary alloys copper-1 bulk composition bulk concentration collector current concentrations added copper alloys copper-2 copper-aluminum alloys copper-indium alloys copper-tin alloy copper-tin and copper-indium cubic centimeters current density curve fit ELECTRON SPECTROSCOPY STUDY electropolished energy for segregation exhibited equilibrium segregation Ferrante Following heating following sputtering friction and wear grain boundary segregation heater current iron alloy iron-silicon alloy layers assumed sampled LEED Lewis Research Center lock-in amplifier McLean's analysis McLean's model microamperes per square normalized to collector number of electrons number of layers number of surface peak-to-peak height normalized perature room temperature segre Segregation Studies silicon alloy single crystal oriented solubility solute atomic sputtering calibration sputtering yield square centimeter sum of concentrations surface concentration surface coverage surface film surface layer sweep speeds tantalum thermal segregation thickness tin and indium tin or indium tion