Computational Electronics: Semiconductor Transport and Device Simulation

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Karl Hess, J.P. Leburton, U. Ravaioli
Springer US, Nov 30, 1990 - Technology & Engineering - 268 pages
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Large computational resources are of ever increasing importance for the simulation of semiconductor processes, devices and integrated circuits. The Workshop on Computational Electronics was intended to be a forum for the dis cussion of the state-of-the-art of device simulation. Three major research areas were covered: conventional simulations, based on the drift-diffusion and the hydrodynamic models; Monte Carlo methods and other techniques for the solution of the Boltzmann transport equation; and computational approaches to quantum transport which are relevant to novel devices based on quantum interference and resonant tunneling phenomena. Our goal was to bring together researchers from various disciplines that contribute to the advancement of device simulation. These include Computer Sci ence, Electrical Engineering, Applied Physics and Applied Mathematics. The suc cess of this multidisciplinary formula was proven by numerous interactions which took place at the Workshop and during the following three-day Short Course on Computational Electronics. The format of the course, including a number of tutorial lectures, and the large attendance of graduate students, stimulated many discussions and has proven to us once more the importance of cross-fertilization between the different disciplines.

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About the author (1990)

About the Author Karl Hess holds the Swanlund Endowed Chair and is professor of electrical and computer engineering and of physics at the University of Illinois, Urbana-Champaign. Dr. Hess has dedicated a major portion of his research to electronic transport in semiconductors and semiconductor devices, with particular emphasis on hot electron effects and effects pertinent to device miniaturization. He is particularly interested in problems that require large computational resources for their solution. Dr. Hess' current research at the Beckman Institute of the University of Illinois is in the area of molecular and electronic nanostructures. He has received numerous awards, including the 1993 IEEE J. J. Ebers Award of the Electron Devices Society and the 1995 IEEE David Sarnoff Field Award for Electronics. He is also a Fellow of the American Academy of Arts and Sciences.