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Problems Related to p n Junctions in Silicon
Theoretical Investigation of the Energy Band
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absorption acoustical approximation atoms band edge band structure breakdown Brillouin zone calculated carrier concentration centers Chem cnyqae conduction band coulomb cross section crystal curve density determined dielectric constant diodes donor dopé doped effective mass electric field electrons and holes energy band energy gap equation exciton experimental experiments Fermi free carrier frequency GaAs germanium Hall coefficient impurity conduction impurity scattering increase InSb interaction interband ionization ionized impurity scattering irradiation lattice levels low temperatures magnetic field magnetoresistance matrix elements measurements method minority carriers mobility n-type neutron observed obtained optical phonon parameters photoconductivity Phys potential q'ro range recombinaison recombination region resistivity résultats room temperature sample semiconductors shown in Fig silicon Solids specimens spectrum surface temperature dependence theoretical theory thermal transitions trapping tunneling valence band velocity voltage wave functions wavelength