Control and Measurement of Ion Bombardment Energies at Substrates Biased with Tailored Voltage WaveformsUniversity of Wisconsin--Madison, 2005 - 112 pages |
Contents
Introduction | 1 |
Literature Review | 16 |
Apparatus and Software | 33 |
Copyright | |
4 other sections not shown
Common terms and phrases
acquisition software amplitude analyzer grids argon bias voltage wave bombarding ions capacitance capacitive coupling Collector Current collector plate Collector Voltage collisions compared Debye length difference effects electrode bias electrode potential electrode voltage wave electrode wave form emissive probe etch rate etch selectivity etching processes feature bottom fluorocarbon GPIB grounded area I-V curve IED's ion bombardment energy ion current ion energy analyzer ion energy control ion energy distribution ion energy measurements ion flux iterations Langmuir probe mean free paths method minimize mTorr narrow nsec perturbation plasma conditions plasma etching plasma potential plasma potential oscillations powered electrode predicted produce repeller grid resolution result retarding grid RF filter RF period sheath potential sheath thickness sheath voltage wave shield grid short ion transit shown in Figure silicon dioxide sinusoidal wave form substrate bias voltage substrate electrode substrate potential tailored bias voltage tailored wave form voltage wave form wave form shape width