Control and Measurement of Ion Bombardment Energies at Substrates Biased with Tailored Voltage WaveformsUniversity of Wisconsin--Madison, 2005 - 112 pages |
Contents
Introduction | 1 |
Apparatus and Software | 3 |
Literature Review | 16 |
Copyright | |
1 other sections not shown
Common terms and phrases
acquisition software amplitude analyzer grids applied argon average ion energy bias voltage wave bias wave form bombarding ion capacitance Collector Current collector plate Collector Voltage collisionless sheath compared Debye length difference effects electrode potential electrode voltage wave electrode wave form emissive probe etch rate etch selectivity feature bottom fluorocarbon frequency GPIB grounded area I-V curve IED's ion bombardment energy ion current ion energy analyzer ion energy control ion energy distribution ion energy measurements ion flux iterations Langmuir probe mass ions mean free paths method minimized narrow nsec perturbation plasma conditions plasma density plasma etching plasma potential oscillations predicted produce repeller grid result retarding grid RF filter RF period sheath potential sheath thickness sheath voltage wave shield grid short ion transit shown in Figure silicon dioxide sinusoidal wave form substrate bias voltage substrate electrode substrate potential tailored bias voltage tailored wave form voltage wave form wave form shape width