Deep Centers in Semiconductors

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CRC Press, Nov 30, 1992 - Science - 928 pages
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Examines several key semiconductor deep centers, all carefully chosen to illustrate a variety of essential concepts. A deep center is a lattice defect or impurity that causes very localized bound states and energies deep in the band gap. For each deep center chosen, a scientist instrumental in its development discusses the theoretical and experimental techniques used to understand that center. The second edition contains four new sections treating recent developments, including a chapter on hydrogen in crystalline semiconductors. Annotation copyright by Book News, Inc., Portland, OR
 

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Contents

Perspectives in the Past Present and Future
1
Chalcogen Impurities in Silicon
87
The Lattice Vacancy in Silicon
177
Oxygen and Oxygen Associates in Gallium
215
The Two Dominant Recombination Centers
407
The MidGap Donor Level EL2 in Gallium
457
DX Centers in IIIV Alloys
591
Iron Impurity Centers in IIIV Semiconductors
667
Chromium in Gallium Arsenide
753
Chromium in IIVI Compounds
817
The Optoelectronic Properties of Copper
843
Hydrogen in Crystalline Semiconductors
899
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