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Defects in Crystalline Structure
Diffusion in the Solid State
Methods for Determining the Defect Equilibria and Diffusion
3 other sections not shown
activation energy anion apparatus calculated cation vacancies cationic sublattice changes chem chemical diffusion coefficient complexes concentration of cation concentration of defects conductance band crystal lattice cuprous oxide decrease defect equilibria degree of ionisation determined deviation from stoichiometry dislocation line disorder dopant edge dislocation electrical conductivity electron holes electronic defects enthalpy of formation entropy experimental expressed Fe Fe Fe following equation formation of defects Frequency factor D0 furnace grain boundaries increase interstitial cations interstitial mechanism interstitial positions ionic defects ionised cation vacancies jumps kcal/mole kinetic kJ/mole layer mass measurements mechanism of diffusion method MeX type mole Mrowec nickel oxide obtained oxidant pressure point defects possible quasi-free electrons reaction chamber sample schematically in Fig screw dislocation self-diffusion coefficient semiconductors shear planes shown in Fig shown schematically solid solution stoichiometric composition studies sulphides surface takes place temperature dependence Temperature range thermodynamic thermodynamic equilibrium thermodynamic potential tracer atom Wadsley defects