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DRIFT FIELD FORMATION AND MEASUREMENT
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25 microns approach Calculated and Measured carrier lifetime Characteristics of Sample CM CN cm sec CN CN CM complementary error function computed concentration profile contract curves Czochralski degradation Delivered to NASA diffusion coefficient diode Distance From Epitaxial dopant doped drift field drift-field solar cells drift-field structures Efficiency vs Wave electric field electron current electron mobility epitaxial deposition epitaxial slices Epitaxial Structures Epitaxial Surface equation erfc evaluation exponential distribution fabricated by Procedure field width Figure ft-cm glaze Gradient Diffused Sample H H H impurity concentration impurity density Instruments Incorporated Tradename irradiation Kleinman lapping Measured Boron Concentration MeV electron minority carriers mobility variations optimum p-n junction p-type p-type silicon photon Phys Q-cm radiation resistance reactor recombination Relative Collection Efficiency result Sample Cells Delivered sheet resistance short circuit current shown in Fig silicon solar cell Silicon Substrate solar cell technique temperature Texas Instruments Incorporated transistor transit values Wave Length