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BACKGROUND AND INTRODUCTION
MODELING THE TRAVELING WAVE MODFET
analysis calculated capacitance CEXP cryogenic CURMAT CURVEC CURVEC(3 device of Figure distributed equivalent circuit drain electrode drain line drain mode effect electric field electro-optic sampling measurements electrodes electron beam lithography equation equivalent circuit model fabricated FET structure GaAs gain gate and drain gate electrode gate length gate line gate metallization gate mode gate voltage growing wave mode I-V curve impedance internal reflection finger laser layer design layout liquid helium lithium tantalate lock-in amplifier long gate matrix measured at room MESFET microns microwave MODFET from wafer niobium ohmic operation optical parameters phase velocities photoconductive switch port predicted propagation constants pseudomorphic pulse reflection finger probe room temperature S-parameter shown in Figure signal step function SUPER-COMPACT superconducting superconducting electrodes switch gap total internal reflection transconductance transistor transmission lines traveling wave amplifier traveling wave FET traveling wave MODFET traveling-wave MODFET VOLMAT wafer waveform wide traveling wave