Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing, Issue 1
D. Misra, H. Iwai
The Electrochemical Society, 2006 - Dielectrics - 340 pages
This issue covers papers relating to advanced semiconductor products that are true representatives of nanoelectics and that have reached below 100nm. Depending on the application, the nanosystem may consist of one or more of the following types of functional components: electronic, optical, magnetic, mechanical, biological, chemical, energy source, and various types of sensing devices. As long as one or more of these fuctional devices is in the 1-100nm dimensions, the resultant system can be defined as a nanosystem. Papers will be in all areas of dielectric issues in nanosystems. In addtional to traditional areas of semiconductor processing and packaging of nanoelectronics, emphasis will be placed on areas where multifunctional device integration (through innovation in design, materials, and processing at the device and system levels) will lead to new applications of nanosystems.
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Carbon Nanotubes Based Nanostructures
Mixed Oxides as Highk Gate Dielectric Films
New Theory of Effective Workfunctions at MetalHighk Dielectric Interfaces
Integration of HfxTayN Metal Gate Electrode with Highk Gate Dielectric in
Effective Workfunction Modulation by As Implantation in Metal Gate Stacks
Extensive Studies for Effects of Nitrogen Incorporation into HfBased Highk
Combinatorial Fabrication and Characterization of Oxide and Metal Thin Film
Metal Contamination from Process Materials Used in Wet Cleaning of Silicon D Sinha Wafer
Advanced TiN MetalGate FinFET Technology
New NonVolatile Memory with Magnetic Nanodots
HfAlO and HfSiO Based Dielectrics for Future DRAM Applications J Heitmann A Avellan T Boescke E Erben B Hintze S Jakschik S
Chemical Mechanical Polishing of SiCOHBased Lowk Dielectrics W Tseng A Sakamoto S Ponoth D Hong L Economikos S Vogt A
Copper Diffusion and Corrosion Behavior Through the Hillock Defect Found S Kim C Shim J Hong H Lee J Han K Kim and Y Kim Beneath the We...
An Easy Method to Measure the Damaged Thickness of Lowk Film after Ash Process
Electrical Characteristics of Erbium Oxide Films on Silicon Substrate by T Pan C Chen J Lee C Hsieh and C Lai Reactive RF Sputtering for Different ...
The Low Leakage Current Density of MIS with SiO2 Film Made by ICPCVD Y Lu S Tsai and M Hon
Product Level Reliability Challenges for 65 nm Technologies
Lanthanum Oxides for Gate Insulator Applications K Kakushima P Ahmet N Sugii K Tsutsui T Hattori and H Iwai
HighkSi Interface Engineering Using a ValenceMending Technique M Tao
Nanocrystalline Silicon Quantum Dot Devices
Characterization of Electronic Charged States of SiBased Quantum Dots and Their Application to Floating Gate Memories
Recent Progress of SiGe Heterostructure Technologies for Novel Devices M Miyao H Kanno and T Sadoh
Degradation in Hafnium Oxynitride Highk Dielectric under Nanoscaled Y Wu T Cheng and H Chen Ramped Voltage Stress by Using Conductive At...
AngleResolved Photoelectron Spectroscopy Study on Gate Insulators
Highk Gate Stack Engineering and Low Frequency Noise Performance
Advanced Gate Stacks with Fully Silicided Gates and Highk Dielectrics for Low Power CMOS
Appl atoms band gap bonds capacitance capacitors characteristics charge neutrality level charge traps chemical CMOS composition spread conduction band copper hillock copyright The Electrochemical crystallization defect degradation density deposition dielectric constant dopant electric field energy etching fabricated Figure FinFETs floating gate formation frequency function gate dielectric gate electrode gate oxide gate stack gate voltage Hf-based HfO2 HfOxNy HfSiON high-k dielectrics IEEE implantation increase injection insulator interfacial layer ions leakage current Lett low-k materials measured metal gate mixed films mobility MOS capacitors MOSFET NBTI nc-Si dots neutrality level Ni3Si nitridation noise observed oxide thickness oxynitride films passivated photoelectron Phys plasma poly-Si reliability samples semiconductor shown in Fig shows Si-fin Si-QDs floating gate SiCOH silicidation silicon silicon dioxide SiO2 slurry sputtering stress structure substrate surface SWCNT Technology thermal thin film threshold voltage TiN-gated transistor tunneling valence band wafer