Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing, Issue 1

Front Cover
D. Misra, H. Iwai
The Electrochemical Society, 2006 - Dielectrics - 340 pages
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This issue covers papers relating to advanced semiconductor products that are true representatives of nanoelectics and that have reached below 100nm. Depending on the application, the nanosystem may consist of one or more of the following types of functional components: electronic, optical, magnetic, mechanical, biological, chemical, energy source, and various types of sensing devices. As long as one or more of these fuctional devices is in the 1-100nm dimensions, the resultant system can be defined as a nanosystem. Papers will be in all areas of dielectric issues in nanosystems. In addtional to traditional areas of semiconductor processing and packaging of nanoelectronics, emphasis will be placed on areas where multifunctional device integration (through innovation in design, materials, and processing at the device and system levels) will lead to new applications of nanosystems.
 

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Contents

Carbon Nanotubes Based Nanostructures
3
Mixed Oxides as Highk Gate Dielectric Films
13
New Theory of Effective Workfunctions at MetalHighk Dielectric Interfaces
25
Integration of HfxTayN Metal Gate Electrode with Highk Gate Dielectric in
41
Effective Workfunction Modulation by As Implantation in Metal Gate Stacks
49
Extensive Studies for Effects of Nitrogen Incorporation into HfBased Highk
63
Combinatorial Fabrication and Characterization of Oxide and Metal Thin Film
79
Metal Contamination from Process Materials Used in Wet Cleaning of Silicon D Sinha Wafer
91
Advanced TiN MetalGate FinFET Technology
197
New NonVolatile Memory with Magnetic Nanodots
209
HfAlO and HfSiO Based Dielectrics for Future DRAM Applications J Heitmann A Avellan T Boescke E Erben B Hintze S Jakschik S
217
Chemical Mechanical Polishing of SiCOHBased Lowk Dielectrics W Tseng A Sakamoto S Ponoth D Hong L Economikos S Vogt A
227
Copper Diffusion and Corrosion Behavior Through the Hillock Defect Found S Kim C Shim J Hong H Lee J Han K Kim and Y Kim Beneath the We...
237
An Easy Method to Measure the Damaged Thickness of Lowk Film after Ash Process
243
Electrical Characteristics of Erbium Oxide Films on Silicon Substrate by T Pan C Chen J Lee C Hsieh and C Lai Reactive RF Sputtering for Different ...
255
The Low Leakage Current Density of MIS with SiO2 Film Made by ICPCVD Y Lu S Tsai and M Hon
261

Product Level Reliability Challenges for 65 nm Technologies
101
Lanthanum Oxides for Gate Insulator Applications K Kakushima P Ahmet N Sugii K Tsutsui T Hattori and H Iwai
115
HighkSi Interface Engineering Using a ValenceMending Technique M Tao
129
Nanocrystalline Silicon Quantum Dot Devices
147
Characterization of Electronic Charged States of SiBased Quantum Dots and Their Application to Floating Gate Memories
157
Recent Progress of SiGe Heterostructure Technologies for Novel Devices M Miyao H Kanno and T Sadoh
165
Degradation in Hafnium Oxynitride Highk Dielectric under Nanoscaled Y Wu T Cheng and H Chen Ramped Voltage Stress by Using Conductive At...
267
AngleResolved Photoelectron Spectroscopy Study on Gate Insulators
275
Highk Gate Stack Engineering and Low Frequency Noise Performance
287
Advanced Gate Stacks with Fully Silicided Gates and Highk Dielectrics for Low Power CMOS
301
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